Structural and Chemical Peculiarities of Nitrogen-Doped Graphene Grown Using Direct Microwave Plasma-Enhanced Chemical Vapor Deposition

نویسندگان

چکیده

Chemical vapor deposition (CVD) is an attractive technique which allows graphene with simultaneous heteroatom doping to be synthesized. In most cases, grown on a catalyst, followed by the subsequent transfer process. The latter responsible for degradation of carrier mobility and conductivity due presence absorbants transfer-related defects. Here, we report catalyst-less transfer-less synthesis nitrogen in single step at reduced temperature (700 °C) via use direct microwave plasma-enhanced CVD. By varying flow rate, explored resultant structural chemical properties nitrogen-doped graphene. Atomic force microscopy revealed more distorted growth process structure introduction gas—the root mean square roughness increased from 0.49 ± 0.2 nm 2.32 nm. Raman spectroscopy indicated that nitrogen-doped, multilayer structures were produced using this method. X-ray photoelectron showed incorporation pure pyridinic N dopants into concentration up 2.08 at.%.

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ژورنال

عنوان ژورنال: Coatings

سال: 2022

ISSN: ['2079-6412']

DOI: https://doi.org/10.3390/coatings12050572